On September 29, Navitas Semiconductor Corp rose 13% in pre-market trading. On the news front, the company was awarded a grant from the US Army to participate in the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program, aimed at developing next-generation 10-kilovolt silicon carbide power semiconductor technology.

The program, sponsored by the US Army Research Laboratory under the Army Combat Capabilities Development Command, seeks to design, fabricate, and test a novel domestically manufactured process for ultra-high-voltage semiconductor devices. The initiative is intended to accelerate the development of silicon carbide insulated-gate bipolar transistors (SiC IGBTs) and related technologies for deployment in mission-critical systems used by the US Armed Forces.

The contract represents a meaningful validation of Navitas Semiconductor Corp's capabilities in wide-bandgap semiconductor technology beyond its core gallium nitride portfolio, potentially opening a new revenue stream in defense applications. It is worth noting that the company is also currently facing a patent infringement lawsuit filed by Wolfspeed earlier in July.

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